c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . WDW60DK30B product description 60 60 60 60 a, a, a, a, 300 300 300 300 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics wt- d003 -rev.a 1 jan .201 4 1010 features ? ultrafast recovery time ? soft recovery characteristics ? low recovery loss ? low forward voltage ? high reliability by planer design ? low leakage current general description frd from winsemi utilizes advanced processing techniques to achieve ultrafast recovery times and higher forward current. its soft recovery characteristics and high reliability suit for wide industrial applications. applications ? freewheeling, snubber, clamp ? inversion welder ? pfc ? plating power supply ? ultrasonic cleaner and welder ? converter & chopper ? ups absolute m aximum r atings symbol parameter test conditions value units v r maximum d.c.reverse voltage 300 v v rrm maximum repetitive revers voltage 300 v i f(av) average forward current tc=110 ,per diode 30 a tc=110 ,per package 60 a i f (rms) rms forward current tc =11 0 ,per diode 60 a i fsm no-repetitive peak surge current t j =45 ,t=10ms,50hz,sine 300 a p d power dissipation 165 w t j junction temperature 150 t stg storage temperature range - 40 ~1 50 torque module-to-sink recommended 1.2 n.m r jc thermal resistance junction-to-case 0.75 /w weight 6.0 g a a a a 2 2 2 2 a1 a1 a1 a1 c c c c
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 2 / 6 WDW60DK30B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics 60 60 60 60 a, a, a, a, 300 300 300 300 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode electrical characteristics t c =25 symbol parameter test conditions value units min typ max i rm reverse leakage current v r =300v - - 20 a v r =300v,t j =125 - - 250 a v f forward voltage drop i f = 30 a - 1.1 1.3 v i f = 3 0a ,tj=125 - 1.0 - v t rr reverse recovery time i f = 1 a ,v r =30,di/dt=-200a/ s - 38 - ns t rr reverse recovery time i f = 30 a , v r =400v di f /dt=-200a/ s t j =25 - 50 - ns t rr reverse recovery time t j =125 - 75 - ns q rr reverse recovery charge t j =125 - 340 - ns i rrm max. reverse recovery current t j =125 - 8.0 - a
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 3 / 6 WDW60DK30B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics 60 60 60 60 a, a, a, a, 300 300 300 300 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode typical performance curres fig.1 forward current i f versus v f fig.2 reverse recovery change q r versus -di f /dt fig.3 peak reverse current i rm versus -di f /dt fig.4 dynamic parameters q r , i rm versus t vj
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 4 / 6 WDW60DK30B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics 60 60 60 60 a, a, a, a, 300 300 300 300 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode fig.5 recovery time t rr versus -di f /d t fig.6 peak forward voltage vfr and t fr versus di f /d t fig.7 transient thermal resistance junction to case
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 5 / 6 WDW60DK30B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics 60 60 60 60 a, a, a, a, 300 300 300 300 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode to- 3pb package dimension
www.winsemi.com tel : 0755-82506288 fax : 0755-82506299 6 / 6 WDW60DK30B product description win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics 60 60 60 60 a, a, a, a, 300 300 300 300 v v v v ultrafast ultrafast ultrafast ultrafast dual dual dual dual diode diode diode diode note: note: note: note: 1. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2. please do not exceed the absolute maximum ratings of the device when circuit designing. 3. winsemi microelectronics co., ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. contact: contact: contact: contact: winsemi microelectronics co., ltd. add:futian district, shenzhen tian an cyber tech plaza two east wing 1002 post code : 518040 tel : 86-0755-82506257 fax : 86-0755-82506299 web site : www.winsemi.com
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